ESD electrostatic protection diode
| PART NO | 类型(内部电路) | VRWM MAX(V) | IRM MAX(uA) | VBR MIN(V) | VC MAX(V) | IPPM MAX(A) | PPP (W) | Cj Typ (pF) | Cj Max (pF) | ESD (Contact)(KV) | 保护线数 数量 | Package | 规格书 |
| CTESD3V3L1B2ZAQ | 双向 | 3.3 | 0.1 | 3.5 | 10 | 9 | 90 | 10 | 13 | ±30 | 1 | DFN0603 |
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| CTESD3V3L1B2ZPQ | 双向 | 3.3 | 0.1 | 3.5 | 10 | 9 | 90 | 10 | 13 | ±30 | 1 | DFN1006-2L |
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| CTESD4V5M1B2ZPQ | 双向 | 4.5 | 1 | 4.6 | 10 | 40 | 400 | 65 | 75 | ±30 | 1 | DFN1006-2L |
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| CTESD5V0L1B2ZAQ | 双向 | 5 | 0.1 | 5.3 | 12 | 8 | 96 | 10 | 13 | ±30 | 1 | DFN0603 |
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| CTESD5V0L1B2ZPQ | 双向 | 5 | 0.1 | 5.3 | 12 | 8 | 96 | 10 | 13 | ±30 | 1 | DFN1006-2L |
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| CTESD5V0X1C2ZAQ | 阵列 | 5 | 0.05 | 6 | 10 | 4 | 44 | 0 | 1 | ±15 | 1 | DFN0603 |
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| CTESD5V0X1C2ZPQ | 阵列 | 5 | 0.05 | 6 | 10 | 4 | 44 | 0 | 1 | ±15 | 1 | DFN1006-2L |
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| CTESD5V0X1U2ZPQ | 阵列 | 5 | 0.1 | 6 | 14 | 4 | 56 | 0 | 0 | ±20 | 1 | DFN1006-2L |
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| CTESD5V5L1B2ZPQ | 双向 | 5.5 | 0.1 | 6.1 | 12 | 6 | 72 | 10 | 13 | ±30 | 1 | DFN1006-2L |
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实现
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